Tetrakis(dimethylamido)hafnium
Tetrakis(dimethylamido)hafnium structure
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Common Name | Tetrakis(dimethylamido)hafnium | ||
|---|---|---|---|---|
| CAS Number | 19782-68-4 | Molecular Weight | 354.79300 | |
| Density | 1.098 g/mL at 25 °C | Boiling Point | 6.1ºC at 760 mmHg | |
| Molecular Formula | C8H24HfN4 | Melting Point | 26-29ºC(lit.) | |
| MSDS | Chinese USA | Flash Point | 109 °F | |
| Symbol |
GHS02, GHS05 |
Signal Word | Danger | |
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Appl. Phys. Lett. 91 , 193503, (2007)
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Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films Hausmann DM, Gordon RG
J. Cryst. Growth 249 , 251-261, (2003)
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The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition Monsma D, Becker J
Material Matters 1(3) , 5, (2006)
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High Purity Metalorganic Precursors for CPV Device Fabrication Rushworth S
Material Matters 5(4)
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