六氯乙硅烷
六氯乙硅烷结构式
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常用名 | 六氯乙硅烷 | 英文名 | Hexachlorodisilane |
|---|---|---|---|---|
| CAS号 | 13465-77-5 | 分子量 | 268.889 | |
| 密度 | 1.6±0.1 g/cm3 | 沸点 | 144.5±9.0 °C at 760 mmHg | |
| 分子式 | Cl6Si2 | 熔点 | <0ºC | |
| MSDS | 中文版 美版 | 闪点 | 78°C | |
| 符号 |
GHS05 |
信号词 | Danger |
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Determination of porphyrin carbon isotopic composition using gas chromatography-isotope ratio monitoring mass spectrometry.
J. Chromatogr. A. 903(1) , 183-191, (2000) Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that it has experienced no obvious isotope fractionation during ... |
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Chemical vapor deposition of silicon films using hexachlorodisilane Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings 77 , 709, (1986)
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Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films. Taylor, R. C., & Scott, B. A.
J. Electrochem. Soc. 136(8) , 2382-2386, (1989)
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Enhancing mechanical properties of silica aerogels Obrey, K. A., Wilson, K. V., & Loy, D. A.
J. Non. Cryst. Solids 375(19) , 3435-3441, (2011)
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Use of hexachlorodisilane as a reducing agent. Stereospecific deoxygenation of acyclic phosphine oxides. Naumann K, et al.
J. Am. Chem. Soc. 91(25) , 7012-7023, (1969)
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Film Properties of Low‐k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia. Tanaka M , et al.
J. Electrochem. Soc. 147(6) , 2284-2289, (2000)
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The Raman Spectrum of Hexachlorodisilane Katayama M, et al.
J. Chem. Phys. 18(4) , 506-509, (1950)
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