Hexachlorodisilane
Modify Date: 2025-08-25 07:18:27
Hexachlorodisilane structure
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Common Name | Hexachlorodisilane | ||
|---|---|---|---|---|
| CAS Number | 13465-77-5 | Molecular Weight | 268.889 | |
| Density | 1.6±0.1 g/cm3 | Boiling Point | 144.5±9.0 °C at 760 mmHg | |
| Molecular Formula | Cl6Si2 | Melting Point | <0ºC | |
| MSDS | Chinese USA | Flash Point | 78°C | |
| Symbol |
GHS05 |
Signal Word | Danger | |
| Name | Hexachlorodisilane |
|---|---|
| Synonym | More Synonyms |
| Density | 1.6±0.1 g/cm3 |
|---|---|
| Boiling Point | 144.5±9.0 °C at 760 mmHg |
| Melting Point | <0ºC |
| Molecular Formula | Cl6Si2 |
| Molecular Weight | 268.889 |
| Flash Point | 78°C |
| Exact Mass | 265.766968 |
| LogP | 8.55 |
| Vapour Pressure | 6.4±0.3 mmHg at 25°C |
| Index of Refraction | 1.489 |
| InChIKey | LXEXBJXDGVGRAR-UHFFFAOYSA-N |
| SMILES | Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl |
| Storage condition | below 5° C |
| Stability | Stable, but reacts violently with water. Moisture sensitive. May be shock sensitive. Incompatible with water, moisture, acids, strong bases, oxidizing agents, alcohols. |
| Symbol |
GHS05 |
|---|---|
| Signal Word | Danger |
| Hazard Statements | H314 |
| Supplemental HS | Reacts violently with water. |
| Precautionary Statements | P280-P305 + P351 + P338-P310 |
| Personal Protective Equipment | Faceshields;full-face respirator (US);Gloves;Goggles;multi-purpose combination respirator cartridge (US);type ABEK (EN14387) respirator filter |
| Hazard Codes | C |
| Risk Phrases | 14-34 |
| Safety Phrases | S26-S36/37/39-S45 |
| RIDADR | UN 2987 8/PG 2 |
| WGK Germany | 3 |
| Packaging Group | II |
| Hazard Class | 8 |
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Determination of porphyrin carbon isotopic composition using gas chromatography-isotope ratio monitoring mass spectrometry.
J. Chromatogr. A. 903(1) , 183-191, (2000) Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that ... |
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Chemical vapor deposition of silicon films using hexachlorodisilane Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings 77 , 709, (1986)
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Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films. Taylor, R. C., & Scott, B. A.
J. Electrochem. Soc. 136(8) , 2382-2386, (1989)
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| 1,1,1,2,2,2-Hexachlorodisilane |
| Hexachlorodisilane |
| Disilane, 1,1,1,2,2,2-hexachloro- |
| EINECS 236-704-1 |
| MFCD00011599 |
| trichloro(trichlorosilyl)silane |