Aluminum nitride
Aluminum nitride structure
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Common Name | Aluminum nitride | ||
|---|---|---|---|---|
| CAS Number | 24304-00-5 | Molecular Weight | 40.988 | |
| Density | 3.26 g/mL at 25 °C(lit.) | Boiling Point | 2517ºC | |
| Molecular Formula | AlN | Melting Point | >2200 °C(lit.) | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS05, GHS07 |
Signal Word | Danger | |
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Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.
Opt. Express 21(3) , 3800-8, (2013) We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measur... |
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1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.
IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 82-7, (2010) This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequenc... |
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Hybrid density functional theory studies of AlN and GaN under uniaxial strain.
J. Phys. Condens. Matter 25(4) , 045801, (2013) The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results ex... |
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Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.
IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 46-51, (2010) In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/Al... |
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FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100).
Ultrasonics 54(1) , 291-5, (2014) A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(100) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrode... |
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Patterned growth and field-emission properties of AlN nanocones.
ACS Appl. Mater. Interfaces 1(9) , 1927-30, (2009) Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively deposited in the hollow region of the mask with diameters o... |
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Electric field effect on (6,0) zigzag single-walled aluminum nitride nanotube.
J. Mol. Model. 18(9) , 4477-89, (2012) Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Ge... |
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Tactile multisensing on flexible aluminum nitride.
Analyst 137(22) , 5260-4, (2012) The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant capacitive variation under normal stress. The application of a... |
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Broadband directional coupling in aluminum nitride nanophotonic circuits.
Opt. Express 21(6) , 7304-15, (2013) Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction and polarization of ... |
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First-principles prediction on electronic and magnetic properties of hydrogenated AlN nanosheets.
J. Comput. Chem. 32(14) , 3122-8, (2011) Based on first-principles calculations, the geometric, electronic, and magnetic properties as well as the relative stability of the fully hydrogenated and semihydrogenated AlN nanosheets (NSs) have been investigated. The results show that different with the b... |