Aluminum nitride
Aluminum nitride structure
|
Common Name | Aluminum nitride | ||
|---|---|---|---|---|
| CAS Number | 24304-00-5 | Molecular Weight | 40.988 | |
| Density | 3.26 g/mL at 25 °C(lit.) | Boiling Point | 2517ºC | |
| Molecular Formula | AlN | Melting Point | >2200 °C(lit.) | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS05, GHS07 |
Signal Word | Danger | |
| Name | aluminium nitride |
|---|---|
| Synonym | More Synonyms |
| Density | 3.26 g/mL at 25 °C(lit.) |
|---|---|
| Boiling Point | 2517ºC |
| Melting Point | >2200 °C(lit.) |
| Molecular Formula | AlN |
| Molecular Weight | 40.988 |
| Exact Mass | 40.984612 |
| PSA | 23.79000 |
| LogP | 0.24008 |
| Stability | Stable. |
| Water Solubility | MAY DECOMPOSE |
| Symbol |
GHS05, GHS07 |
|---|---|
| Signal Word | Danger |
| Hazard Statements | H314-H335 |
| Precautionary Statements | P261-P280-P305 + P351 + P338-P310 |
| Personal Protective Equipment | dust mask type N95 (US);Eyeshields;Gloves |
| Hazard Codes | Xi:Irritant; |
| Risk Phrases | R36/37/38 |
| Safety Phrases | S26-S37/39 |
| RIDADR | UN3178 |
| WGK Germany | 3 |
| Packaging Group | II |
| Hazard Class | 4.1 |
|
~0%
Aluminum nitride CAS#:24304-00-5 |
| Literature: Ebben, Maarten; Meulen, J. J. ter Chemical Physics Letters, 1991 , vol. 177, p. 229 - 234 |
|
~0%
Aluminum nitride CAS#:24304-00-5 |
| Literature: Ebben, Maarten; Meulen, J. J. ter Chemical Physics Letters, 1991 , vol. 177, p. 229 - 234 |
|
~%
Aluminum nitride CAS#:24304-00-5 |
| Literature: Chemical Physics Letters, , vol. 177, p. 229 - 234 |
| Precursor 4 | |
|---|---|
| DownStream 0 | |
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Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.
Opt. Express 21(3) , 3800-8, (2013) We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carrie... |
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1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.
IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 82-7, (2010) This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows... |
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Hybrid density functional theory studies of AlN and GaN under uniaxial strain.
J. Phys. Condens. Matter 25(4) , 045801, (2013) The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated usi... |
| Aluminum, nitrido- |
| EINECS 246-140-8 |
| MFCD00003429 |
| Aluminum nitride (AlN) |
| Aluminium nitride |
| Nitridoaluminium |
| Nitridoaluminum |
| Aluminum mononitride |
| aluminum nitride |
| azanylidynealumane |
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