gallium arsenide
gallium arsenide structure
|
Common Name | gallium arsenide | ||
|---|---|---|---|---|
| CAS Number | 1303-00-0 | Molecular Weight | 144.64 | |
| Density | 5.31 g/mL at 25 °C(lit.) | Boiling Point | N/A | |
| Molecular Formula | GaAs | Melting Point | 1238°C | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS08 |
Signal Word | Danger | |
|
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test d... |
|
|
Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.
PLoS ONE 7(11) , e50681, (2012) Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported... |
|
|
Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells.
J. Phys. Condens. Matter 25(2) , 025801, (2013) Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coi... |
|
|
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.
ACS Nano 6(10) , 9320-5, (2012) Ternary InGaAs nanowires have recently attracted extensive attention due to their superior electron mobility as well as the ability to tune the band gap for technological applications ranging from high-performance electronics to high-efficiency photovoltaics.... |
|
|
Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.
J. Phys. Condens. Matter 24(40) , 405801, (2012) We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG den... |
|
|
Gallium arsenide.
Occup. Med. 1(1) , 49-58, (1986) The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved t... |
|
|
Bound states, electron localization and spin correlations in low-dimensional GaAs/AlGaAs quantum constrictions.
J. Phys. Condens. Matter 25(7) , 072201, (2013) We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confi... |
|
|
Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.
Phys. Rev. Lett. 109(2) , 026801, (2012) We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) chara... |
|
|
Electrodeposition of crystalline GaAs on liquid gallium electrodes in aqueous electrolytes.
J. Am. Chem. Soc. 135(1) , 330-9, (2013) Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochem... |
|
|
An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor.
Nanoscale 4(20) , 6415-8, (2012) An excellent biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was used to detect lactic acid. Due to the new structure, addition of the Si-doped GaAs cap layer, the HEMT biosensor could detect a wide range of lactic acid... |