![]() lead selenide structure
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Common Name | lead selenide | ||
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CAS Number | 12069-00-0 | Molecular Weight | 287.16800 | |
Density | 8.1 g/cm3 | Boiling Point | N/A | |
Molecular Formula | HPbSe | Melting Point | 1065ºC | |
MSDS | Chinese USA | Flash Point | N/A | |
Symbol |
![]() ![]() ![]() GHS06, GHS08, GHS09 |
Signal Word | Danger |
Optical fiber amplifiers based on PbS/CdS QDs modified by polymers.
Opt. Express 21(7) , 8214-9, (2013) Optical fiber amplifiers based on PbS/CdS semiconductor quantum dots (QDs) modified by an amphiphilic polymer were demonstrated. Well-defined QDs and an amphiphilic copolymer were first prepared and the amphiphilic copolymer was then used to disperse the QDs ... |
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Triplet exciton dissociation in singlet exciton fission photovoltaics.
Adv. Mater. 24(46) , 6169-74, (2012) Triplet exciton dissociation in singlet exciton fission devices with three classes of acceptors are characterized: fullerenes, perylene diimides, and PbS and PbSe colloidal nanocrystals. Using photocurrent spectroscopy and a magnetic field probe it is found t... |
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Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.
Nanoscale 4(7) , 2187-201, (2012) Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological... |
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Controlled synthesis of compositionally tunable ternary PbSe(x)S(1-x) as well as binary PbSe and PbS nanowires.
ACS Nano 6(3) , 2833-43, (2012) High-quality compositionally tunable ternary PbSe(x)S(1-x) (x = 0.23, 0.39, 0.49, 0.68, and 0.90) nanowires (NWs) and their binary analogues have been grown using solution-liquid-solid growth with lead(II) diethyldithiocarbamate, Pb(S(2)CNEt(2))(2), and lead(... |
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Direct mapping of hot-electron relaxation and multiplication dynamics in PbSe quantum dots.
Nano Lett. 12(3) , 1588-91, (2012) How hot electrons relax in semiconductor quantum dots is of critical importance to many potential applications, such as solar energy conversion, light emission, and photon detection. A quantitative answer to this question has not been possible due in part to ... |
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Interface-induced nucleation, orientational alignment and symmetry transformations in nanocube superlattices.
Nano Lett. 12(9) , 4791-8, (2012) The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ syn... |
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Exciton relaxation in PbSe nanorods.
ACS Nano 6(9) , 8120-7, (2012) Measurements of the picosecond-time-scale dynamics of photoexcited electrons in PbSe nanorods are reported. The intraband (1Π → 1Σ) relaxation occurs with a time constant of ~500 fs, which corresponds to a fast energy-relaxation rate of ~0.6 eV/ps. The biexci... |
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Composite counter electrode based on nanoparticulate PbS and carbon black: towards quantum dot-sensitized solar cells with both high efficiency and stability.
ACS Appl. Mater. Interfaces 4(11) , 6162-8, (2012) PbS/carbon black (CB) composite counter electrode (CE) has been fabricated by a low cost and low temperature processable method using the wet chemistry synthesized PbS nanoparticles. The nanosized PbS in the composite CE provides a large area of catalytic sit... |
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PbS:glass as broad-bandwidth near-infrared light source material.
Opt. Express 21(2) , 2287-96, (2013) Silicate- and borosilicate-based PbS:glass material and borosilicate-glass-based fibers are fabricated and analyzed. Optical properties including absorption and emission are characterized and related to growth and annealing conditions. In silicate glasses PbS... |
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Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations.
Electrophoresis 33(16) , 2475-81, (2012) DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of ... |