lead selenide

lead selenide Structure
lead selenide structure
Common Name lead selenide
CAS Number 12069-00-0 Molecular Weight 287.16800
Density 8.1 g/cm3 Boiling Point N/A
Molecular Formula HPbSe Melting Point 1065ºC
MSDS Chinese USA Flash Point N/A
Symbol GHS06 GHS08 GHS09
GHS06, GHS08, GHS09
Signal Word Danger

Optical fiber amplifiers based on PbS/CdS QDs modified by polymers.

Opt. Express 21(7) , 8214-9, (2013)

Optical fiber amplifiers based on PbS/CdS semiconductor quantum dots (QDs) modified by an amphiphilic polymer were demonstrated. Well-defined QDs and an amphiphilic copolymer were first prepared and the amphiphilic copolymer was then used to disperse the QDs ...

Triplet exciton dissociation in singlet exciton fission photovoltaics.

Adv. Mater. 24(46) , 6169-74, (2012)

Triplet exciton dissociation in singlet exciton fission devices with three classes of acceptors are characterized: fullerenes, perylene diimides, and PbS and PbSe colloidal nanocrystals. Using photocurrent spectroscopy and a magnetic field probe it is found t...

Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.

Nanoscale 4(7) , 2187-201, (2012)

Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological...

Controlled synthesis of compositionally tunable ternary PbSe(x)S(1-x) as well as binary PbSe and PbS nanowires.

ACS Nano 6(3) , 2833-43, (2012)

High-quality compositionally tunable ternary PbSe(x)S(1-x) (x = 0.23, 0.39, 0.49, 0.68, and 0.90) nanowires (NWs) and their binary analogues have been grown using solution-liquid-solid growth with lead(II) diethyldithiocarbamate, Pb(S(2)CNEt(2))(2), and lead(...

Direct mapping of hot-electron relaxation and multiplication dynamics in PbSe quantum dots.

Nano Lett. 12(3) , 1588-91, (2012)

How hot electrons relax in semiconductor quantum dots is of critical importance to many potential applications, such as solar energy conversion, light emission, and photon detection. A quantitative answer to this question has not been possible due in part to ...

Interface-induced nucleation, orientational alignment and symmetry transformations in nanocube superlattices.

Nano Lett. 12(9) , 4791-8, (2012)

The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ syn...

Exciton relaxation in PbSe nanorods.

ACS Nano 6(9) , 8120-7, (2012)

Measurements of the picosecond-time-scale dynamics of photoexcited electrons in PbSe nanorods are reported. The intraband (1Π → 1Σ) relaxation occurs with a time constant of ~500 fs, which corresponds to a fast energy-relaxation rate of ~0.6 eV/ps. The biexci...

Composite counter electrode based on nanoparticulate PbS and carbon black: towards quantum dot-sensitized solar cells with both high efficiency and stability.

ACS Appl. Mater. Interfaces 4(11) , 6162-8, (2012)

PbS/carbon black (CB) composite counter electrode (CE) has been fabricated by a low cost and low temperature processable method using the wet chemistry synthesized PbS nanoparticles. The nanosized PbS in the composite CE provides a large area of catalytic sit...

PbS:glass as broad-bandwidth near-infrared light source material.

Opt. Express 21(2) , 2287-96, (2013)

Silicate- and borosilicate-based PbS:glass material and borosilicate-glass-based fibers are fabricated and analyzed. Optical properties including absorption and emission are characterized and related to growth and annealing conditions. In silicate glasses PbS...

Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations.

Electrophoresis 33(16) , 2475-81, (2012)

DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of ...