Indium
Indium structure
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Common Name | Indium | ||
|---|---|---|---|---|
| CAS Number | 7440-74-6 | Molecular Weight | 114.81800 | |
| Density | 7.3 g/mL at 25 °C(lit.) | Boiling Point | 2000 °C | |
| Molecular Formula | In | Melting Point | 156 °C | |
| MSDS | Chinese USA | Flash Point | 2072°C | |
| Symbol |
GHS07 |
Signal Word | Warning | |
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Aqueous synthesis of highly luminescent AgInS₂-ZnS quantum dots and their biological applications.
Nanoscale 5(6) , 2322-7, (2013) Highly emissive and air-stable AgInS2-ZnS quantum dots (ZAIS QDs) with quantum yields of up to 20% have been successfully synthesized directly in aqueous media in the presence of polyacrylic acid (PAA) and mercaptoacetic acid (MAA) as stabilizing and reactivi... |
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Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
Opt. Express 21(3) , 3138-44, (2013) We demonstrate localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs with metal NPs is higher by 20.1% for NUV-LEDs with Ag NPs ... |
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Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013) We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases... |
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Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits.
Opt. Express 21(6) , 6910-8, (2013) Highly efficient, low-loss, and compact InP/InGaAsP polarization converter based on a half-ridge waveguide structure is fabricated and demonstrated experimentally. The device is fabricated by a simple self-aligned process and integrated with a ridge InP waveg... |
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Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.
Opt. Express 21(6) , 7570-6, (2013) Gain-switched pulses of InGaAs double-quantum-well lasers fabricated from identical epitaxial laser wafers were measured under both current injection and optical pumping conditions. The shortest output pulse widths were nearly identical (about 40 ps) both for... |
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Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
Opt. Express 21 Suppl 1 , A123-30, (2013) Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the... |
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Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.
Toxicol. Appl. Pharmacol. 198(3) , 405-11, (2004) Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regardi... |
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Pleural effects of indium phosphide in B6C3F1 mice: nonfibrous particulate induced pleural fibrosis.
Exp. Lung Res. 35(10) , 858-82, (2009) The mechanism(s) by which chronic inhalation of indium phosphide (InP) particles causes pleural fibrosis is not known. Few studies of InP pleural toxicity have been conducted because of the challenges in conducting particulate inhalation exposures, and becaus... |
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Temperature dependent fluorescence of CuInS/ZnS quantum dots in near infrared region.
J. Nanosci. Nanotechnol. 13(9) , 6115-9, (2013) The semiconductor nanocrystals (or quantum dots) have shown peculiar optical and electrical properties due to their exceptionally small size. In recent years tremendous researches on quantum dots have been carried out. Among them, QDs as sensing media for che... |
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Three-dimensional and multienergy gamma-ray simultaneous imaging by using a Si/CdTe Compton camera.
Radiology 267(3) , 941-7, (2013) To develop a silicon (Si) and cadmium telluride (CdTe) imaging Compton camera for biomedical application on the basis of technologies used for astrophysical observation and to test its capacity to perform three-dimensional (3D) imaging.All animal experiments ... |