Indium phosphide (InP)
Indium phosphide (InP) structure
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Common Name | Indium phosphide (InP) | ||
|---|---|---|---|---|
| CAS Number | 22398-80-7 | Molecular Weight | 147.80800 | |
| Density | 4,787 g/cm3 | Boiling Point | N/A | |
| Molecular Formula | H2InP | Melting Point | 1070°C | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS08 |
Signal Word | Danger | |
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InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test d... |
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Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013) We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases... |
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Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
Small 8(12) , 1851-6, (2012) Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal... |
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Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.
Opt. Express 20(18) , 19946-55, (2012) We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical am... |
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InP/ZnS as a safer alternative to CdSe/ZnS core/shell quantum dots: in vitro and in vivo toxicity assessment.
Nanoscale 5(1) , 307-17, (2013) We show that water soluble InP/ZnS core/shell QDs are a safer alternative to CdSe/ZnS QDs for biological applications, by comparing their toxicity in vitro (cell culture) and in vivo (animal model Drosophila). By choosing QDs with comparable physical and chem... |
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Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP.
J. Phys. Condens. Matter 25(8) , 085506, (2013) Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we fou... |
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Integrated InP frequency discriminator for Phase-modulated microwave photonic links.
Opt. Express 21(3) , 3726-36, (2013) We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the... |
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Highly-sensitive and label-free indium phosphide biosensor for early phytopathogen diagnosis.
Biosens. Bioelectron. 36(1) , 62-8, (2012) The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed ... |
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Serial 100 Gb/s connectivity based on polymer photonics and InP-DHBT electronics.
Opt. Express 20(27) , 28538-43, (2012) We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT e... |
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Interplay between crystal phase purity and radial growth in InP nanowires.
Nanotechnology 23(38) , 385205, (2012) The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that... |