[Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3]

[Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3] Structure
[Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3] structure
Common Name [Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3]
CAS Number 1494-07-1 Molecular Weight 774.430
Density N/A Boiling Point N/A
Molecular Formula C12F18MoS6 Melting Point N/A
MSDS Chinese USA Flash Point N/A
Symbol GHS07
GHS07
Signal Word Warning

Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers.

J. Am. Chem. Soc. 131 , 12530, (2009)

Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)(3)), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopan...

Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers. Qi Y, et al.

J. Am. Chem. Soc.

Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari SP, et al.

Org. Electron.

A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation. Qi Y, et al.

Chem. Mater.

Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering Zhao W, et al.

Appl. Phys. Lett.

A Molybdenum Dithiolene Complex as p-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation Qi, Y.; et. al.

Chem. Mater. 22 , 524, (2010)

Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari, S. P.; et. al.

Org. Electron. 11 , 860, (2010)

Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering Zhao, W.; et. al.

Appl. Phys. Lett. 97 , 123305/1, (2010)

Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers. Qi Y, et al.

J. Am. Chem. Soc. 131(35) 12530-12531

Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari SP, et al.

Org. Electron. 11(5) 860-863