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硼烷氨

硼烷氨结构式
硼烷氨结构式
品牌特惠专场
常用名 硼烷氨 英文名 Borane ammonia complex
CAS号 13774-81-7 分子量 30.865
密度 N/A 沸点 N/A
分子式 BH6N 熔点 105-110ºC
MSDS 中文版 美版 闪点 N/A

N-linked glycan profiling in neuroblastoma cell lines.

J. Proteome Res. 14 , 2074-81, (2015)

Although MYCN amplification has been associated with aggressive neuroblastoma, the molecular mechanisms that differentiate low-risk, MYCN-nonamplified neuroblastoma from high-risk, MYCN-amplified disease are largely unknown. Genomic and proteomic studies have...

Integrated Transcriptomic and Glycomic Profiling of Glioma Stem Cell Xenografts.

J. Proteome Res. 14 , 3932-9, (2015)

Bone marrow-derived human mesenchymal stem cells (BM-hMSCs) have the innate ability to migrate or home toward and engraft in tumors such as glioblastoma (GBM). Because of this unique property of BM-hMSCs, we have explored their use for cell-mediated therapeut...

Surfactant-free synthesis of plasmonic tungsten oxide nanowires with visible-light-enhanced hydrogen generation from ammonia borane.

Chem. Asian J. 10 , 1291-4, (2015)

WO3-x nanowires were successfully synthesized through a simple surfactant-free solvothermal method. These nanowires exhibit strong plasmonic absorption in the visible and near-infrared region owing to the abundant oxygen vacancies. The plasmon excitation of t...

Color-Controlled Ag Nanoparticles and Nanorods within Confined Mesopores: Microwave-Assisted Rapid Synthesis and Application in Plasmonic Catalysis under Visible-Light Irradiation.

Chemistry 21 , 11885-93, (2015)

Color-controlled spherical Ag nanoparticles (NPs) and nanorods, with features that originate from their particle sizes and morphologies, can be synthesized within the mesoporous structure of SBA-15 by the rapid and uniform microwave (MW)-assisted alcohol redu...

Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.

Small 11(12) , 1402-8, (2015)

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility...

Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices.

ACS Nano 6(6) , 5234-5241, (2012)

Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial gr...

Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

ACS Nano 7(11) , 10129-10138, (2013)

Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies...

Syntheses and structural characterizations of anionic borane-capped ammonia borane oligomers: evidence for ammonia borane H2 release via a base-promoted anionic dehydropolymerization mechanism.

J. Am. Chem. Soc. 133 , 17093-17099, (2011)

Studies of the activating effect of Verkade's base, 2,8,9-triisobutyl-2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane (VB), on the rate and extent of H(2) release from ammonia borane (AB) have led to the syntheses and structural characterizations of three an...

Tetrahedron Lett. , 693,697, (1980)

X. Yang, et al.,

Tetrahedron 67 , 7121-7127, (2011)