gallium(iii) oxide
gallium(iii) oxide structure
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Common Name | gallium(iii) oxide | ||
|---|---|---|---|---|
| CAS Number | 12024-21-4 | Molecular Weight | 189.46000 | |
| Density | 5.88 | Boiling Point | N/A | |
| Molecular Formula | Ga2H2O3 | Melting Point | 1740ºC | |
| MSDS | Chinese USA | Flash Point | N/A | |
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Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor.
J. Nanosci. Nanotechnol. 13(11) , 7535-9, (2013) While observing the transfer characteristics of a-IGZO TFTs, it was noticed that a hump occurred in the subthreshold regime after light and bias stress. This study analyzes the mechanism of the hump occurrence. It was determined that hump characteristics were... |
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First-principles prediction of new photocatalyst materials with visible-light absorption and improved charge separation: surface modification of rutile TiO₂ with nanoclusters of MgO and Ga₂O₃.
ACS Appl. Mater. Interfaces 4(11) , 5863-71, (2012) Titanium dioxide is an important and widely studied photocatalytic material, but to achieve photocatalytic activity under visible-light absorption, it needs to have a narrower band gap and reduced charge carrier recombination. First-principles simulations are... |
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Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.
Optics Letters 37(2) , 268-70, (2012) The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high ... |
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Synthesis and characterization of beta-Ga2O3 nanorod array clumps by chemical vapor deposition.
J. Nanosci. Nanotechnol. 12(11) , 8481-6, (2012) beta-Ga2O3 nanorod array clumps were successfully synthesized on Si (111) substrates by chemical vapor deposition. The composition, microstructure, morphology, and light-emitting property of these clumps were characterized by X-ray diffraction, Fourier transf... |
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ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.
J. Nanosci. Nanotechnol. 13(1) , 448-51, (2013) We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-s... |
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Hydrogenated cation vacancies in semiconducting oxides.
J. Phys. Condens. Matter 23(33) , 334212, (2011) Using first-principles calculations we have studied the electronic and structural properties of cation vacancies and their complexes with hydrogen impurities in SnO(2), In(2)O(3) and β-Ga(2)O(3). We find that cation vacancies have high formation energies in S... |
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Chemical bonding in copper-based transparent conducting oxides: CuMO2 (M = In, Ga, Sc).
J. Phys. Condens. Matter 23(33) , 334201, (2011) The geometry and electronic structure of copper-based p-type delafossite transparent conducting oxides, CuMO(2) (M = In, Ga, Sc), are studied using the generalized gradient approximation (GGA) corrected for on-site Coulomb interactions (GGA + U). The bonding ... |
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Design of amphoteric mixed oxides of zinc and Group 3 elements (Al, Ga, In): migration effects on basic features.
Phys. Chem. Chem. Phys. 14(12) , 4155-61, (2012) The design of new amphoteric catalysts is of great interest for several industrial processes, especially those covering dehydration and dehydrogenation phenomena. Adsorption microcalorimetry was used to monitor the design of mixed oxides of zinc with Group 3 ... |
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A molecular half-wave rectifier.
J. Am. Chem. Soc. 133(39) , 15397-411, (2011) This paper describes the performance of junctions based on self-assembled monolayers (SAMs) as the functional element of a half-wave rectifier (a simple circuit that converts, or rectifies, an alternating current (AC) signal to a direct current (DC) signal). ... |
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A visible-light-sensitive water splitting photocatalyst composed of Rh3+ in a 4d6 electronic configuration, Rh3+-doped ZnGa2O4.
Chem. Commun. (Camb.) 47(6) , 1884-6, (2011) Using the Rh(3+) ion (Rh d(6)) in a regular octahedral coordination, which forms fully occupied t(2g)(6) and empty e(g)(0) as a result of ligand-field splitting, we demonstrated that Rh-doped ZnGa(2)O(4) had midgap states created by t(2g)(6) and e(g)(0) that ... |