Chunlin He, Mark P Stoykovich
文献索引：Small 11 , 2407-16, (2015)
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The self-assembly of block copolymers in thin films provides an attractive approach to patterning 5-100 nm structures. Cross-linking and photopatterning of the self-assembled block copolymer morphologies provide further opportunities to structure such materials for lithographic applications, and to also enhance the thermal, chemical, or mechanical stability of such nanostructures to achieve robust templates for subsequent fabrication processes. Here, model lamellar-forming diblock copolymers of polystyrene and poly(methyl methacrylate) with an epoxide functionality are synthesized by atom transfer radical polymerization. We demonstrate that self-assembly and cross-linking of the reactive block copolymer materials in thin films can be decoupled into distinct, controlled process steps using solvent annealing and thermal treatment/ultraviolet exposure, respectively. Conventional optical lithography approaches can also be applied to the cross-linkable block copolymer materials in thin films and enable simultaneous structure formation across scales-micrometer scale patterns achieved by photolithography and nanostructures via self-assembly of the block copolymer. Such materials and processes are thus shown to be capable of self-assembling distinct block copolymers (e.g., lamellae of significantly different periodicity) in adjacent regions of a continuous thin film. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
