Etching Silicon with HF–HNO3–H2SO4/H2O Mixtures–Unprecedented Formation of Trifluorosilane, Hexafluorodisiloxane, and Si–F Surface Groups

…, C Gondek, M Kronstein, S Patzig??Klein…

文献索引：Lippold, Marcus; Boehme, Uwe; Gondek, Christoph; Kronstein, Martin; Patzig-Klein, Sebastian; Weser, Martin; Kroke, Edwin European Journal of Inorganic Chemistry, 2012 , # 34 p. 5714 - 5721

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被引用次数: 8

摘要

Abstract The etching behaviour of sulfuric-acid-containing HF–HNO 3 solutions towards crystalline silicon surfaces has been studied over a wide range of H 2 SO 4 concentrations. For mixtures with low sulfuric acid concentration, NO 2/N 2 O 4, N 2 O 3, NO and N 2 O have been detected by means of FTIR spectroscopy. Increasing concentrations of nitric acid lead to high etching rates and to an enhanced formation of NO 2/N 2 O 4. Different products ...