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Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass

10.1002/pip.2923

2017-08-02

The effects of proton irradiation of CdTe solar cells deposited directly onto radiation hard cover glass were investigated using 0.5-MeV proton energy and different dose rates the cells were subjected. At the lowest fluence, 1 × 1012 cm−2, the relative effici...

Evaluation of subcell power conversion efficiencies of radiation-damaged triple-junction solar cells using photoluminescence decays

10.1002/pip.2912

2017-07-26

The subcell conversion efficiencies of proton damaged samples are determined with a new optical method that does not require any electrical contacts. By measuring the excitation power dependence of time-resolved photoluminescence decays, three unique time con...

KF post deposition treatment in co-evaporated Cu(In,Ga)Se2 thin film solar cells: Beneficial or detrimental effect induced by the absorber characteristics

10.1002/pip.2924

2017-07-26

To improve the photovoltaic performance of Cu(In,Ga)Se2-based solar cells by the use of a potassium fluoride post-deposition treatment (KF-PDT), the surface of the absorber, grown on soda lime glass by 3-stage co-evaporation, has to be copper depleted. Then, ...

In situ recycle of PbI2 as a step towards sustainable perovskite solar cells

10.1002/pip.2916

2017-07-21

This is a manuscript by Jie Xu, Ziyang Hu*, Like Huang, Xiaokun Huang, Xianyu Jia, Jing Zhang, Jianjun Zhang, and Yuejin Zhu and titled “In Situ Recycle of PbI2 as a Step Towards Sustainable Perovskite Solar Cells.” In this paper, high-efficiency perovskite s...

Evaluation and modeling of the potential effects of a module manufacturing anomaly

10.1002/pip.2908

2017-07-13

A manufacturing anomaly was found in a subset of modules deployed in a large utility scale project. This potential failure mode was identified during periodic testing of modules during the production run. This potential failure mode was characterized by an in...

Annual degradation rates of recent crystalline silicon photovoltaic modules

10.1002/pip.2903

2017-07-10

Tree indicators were used to estimate the annual degradation rates of the various recently produced c-Si photovoltaic (PV) modules. Although the performance of the newly installed PV modules decreased by over 2% owing to initial light-induced degradation, lit...

Large-area flexible, transparent, and highly luminescent films containing lanthanide (III) complex-doped ionic liquids for efficiency enhancement of silicon-based heterojunction solar cell

10.1002/pip.2915

2017-07-04

Novel Ln3+ complex-doped ILs have been successfully prepared, showing excellent luminescence performance and very high absolute quantum efficiency (up to 97.22%). Large area (17 × 17 cm2) flexible, transparent, and luminescent PMMA thin films were prepared th...

Performance stability of photovoltaic modules in different climates

10.1002/pip.2904

2017-06-30

The metastable behaviour and long-term stability of various photovoltaic module technologies was investigated systematically in different climates by a new approach based on internationally approved standards. Relative changes in the power performance at stan...

Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process

10.1002/pip.2910

2017-06-30

A cost effective gapless IBC was fabricated by using ion implantation with shadow masks. We fabricated IBC solar cell with optimized doping condition at counter doped region. The shunt resistance and junction breakdown confirmed that the shunt resistance was ...

Aluminum-doped Zn1 − xMgxO as transparent conductive oxide of Cu(In,Ga)(S,Se)2-based solar cell for minimizing surface carrier recombination

10.1002/pip.2911

2017-06-21

Difference of conduction band minimum (EC) between Zn1 − xMgxO:Al (transparent conductive oxide; TCO) layer and Cu(In,Ga)(S,Se)2 (CIGSSe) absorber is optimized by varying [Mg]/([Mg] + [Zn]), x. Addition of 12% Mg into ZnO:Al to form Zn0.88Mg0.12O:Al as TCO la...