Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process
Young-Su Kim, Chanbin Mo, Doo Youl Lee, Sung Chan Park, Dongseop Kim, Junggyu Nam, JungYup Yang, Dongchul Suh, Hyun-Jong Kim, Hyomin Park, Se Jin Park, Donghwan Kim, Jungho Song, Hae-Seok Lee, Sungeun Park, Yoonmook Kang
文献索引：10.1002/pip.2910
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摘要
A cost effective gapless IBC was fabricated by using ion implantation with shadow masks. We fabricated IBC solar cell with optimized doping condition at counter doped region. The shunt resistance and junction breakdown confirmed that the shunt resistance was over 5000 Ω cm2 in the case of the average shunt resistance value. After the doping conditions were optimized, a high efficiency of 23% was achieved with a fill factor of over 81%.