Zinc selenide structure
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Common Name | Zinc selenide | ||
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CAS Number | 1315-09-9 | Molecular Weight | 144.369 | |
Density | 5.42 g/mL at 25ºC | Boiling Point | N/A | |
Molecular Formula | HSeZn | Melting Point | 1100ºC | |
MSDS | Chinese USA | Flash Point | N/A | |
Symbol |
GHS06, GHS08, GHS09 |
Signal Word | Danger |
Name | Zinc selenide |
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Synonym | More Synonyms |
Density | 5.42 g/mL at 25ºC |
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Melting Point | 1100ºC |
Molecular Formula | HSeZn |
Molecular Weight | 144.369 |
Exact Mass | 143.845673 |
Symbol |
GHS06, GHS08, GHS09 |
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Signal Word | Danger |
Hazard Statements | H301 + H331-H373-H410 |
Precautionary Statements | P261-P273-P301 + P310-P311-P501 |
Personal Protective Equipment | Eyeshields;Faceshields;Gloves;type P2 (EN 143) respirator cartridges |
Hazard Codes | T: Toxic;N: Dangerous for the environment; |
Risk Phrases | 23/25-33-50/53 |
Safety Phrases | 20/21-28-45-60-61 |
RIDADR | UN 3283 |
WGK Germany | 3 |
Packaging Group | III |
Hazard Class | 4.3 |
~% Zinc selenide CAS#:1315-09-9 |
Literature: Indian Journal of Chemistry, Section A: Inorganic, Physical, Theoretical & Analytical, , vol. 28, # 7 p. 557 - 560 |
Precursor 2 | |
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DownStream 0 |
The interface effect on the band offset of semiconductor nanocrystals with type-I core-shell structure.
Phys. Chem. Chem. Phys. 15(15) , 5472-6, (2013) In order to pursue the interface effect on the band offset of the semiconductor nanocrystals with the type-I core-shell structure, we have established a theoretical model to elucidate the underlying m... |
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Harvesting solar energy by means of charge-separating nanocrystals and their solids.
J. Vis. Exp. (66) , e4296, (2012) Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials offering a superior control over the spatial dist... |
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Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.
J. Nanosci. Nanotechnol. 12(7) , 5407-11, (2012) White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-eth... |
Selenoxozinc |
EINECS 215-259-7 |
MFCD00011296 |
Zinc, selenoxo- |