Tetrakis(ethylmethylamino)hafnium

[ Density]:
1.324

[ Boiling Point ]:
79ºC0.1 mm Hg(lit.)

[ Melting Point ]:
<-50ºC

[ Molecular Formula ]:
C₁₂H₃₂HfN₄

[ Molecular Weight ]:
410.89900

[ Flash Point ]:
52 °F

[ Exact Mass ]:
412.20900

[ PSA ]:
12.96000

[ LogP ]:
1.60960

[ Storage condition ]:
2-8°C

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[ Symbol ]:

GHS02, GHS07

[ Signal Word ]:
Danger

[ Hazard Statements ]:
H225-H261-H315-H319-H335

[ Supplemental HS ]:
Reacts violently with water.

[ Precautionary Statements ]:
P210-P231 + P232-P261-P305 + P351 + P338-P422

[ Personal Protective Equipment ]:
Eyeshields;Faceshields;full-face respirator (US);Gloves;multi-purpose combination respirator cartridge (US);type ABEK (EN14387) respirator filter

[ Hazard Codes ]:
F: Flammable;Xi: Irritant;

[ Risk Phrases ]:
R11

[ Safety Phrases ]:
16-26-36

[ RIDADR ]:
UN 3398 4.3/PG 2

[ WGK Germany ]:
3

[ Packaging Group ]:
II

[ Hazard Class ]:
4.3

[ HS Code ]:
2921199090

[ HS Code ]: 2921199090

[ Summary ]:
2921199090 other acyclic monoamines and their derivatives; salts thereof VAT:17.0% Tax rebate rate:9.0% Supervision conditions:none MFN tariff:6.5% General tariff:30.0%

In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).

ACS Appl. Mater. Interfaces 2 , 347, (2010)

The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and...

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