Hexachlorodisilane

[ Density]:
1.6±0.1 g/cm3

[ Boiling Point ]:
144.5±9.0 °C at 760 mmHg

[ Melting Point ]:
<0ºC

[ Molecular Formula ]:
Cl₆Si₂

[ Molecular Weight ]:
268.889

[ Flash Point ]:
78°C

[ Exact Mass ]:
265.766968

[ LogP ]:
8.55

[ Vapour Pressure ]:
6.4±0.3 mmHg at 25°C

[ Index of Refraction ]:
1.489

[ Storage condition ]:
below 5° C

[ Stability ]:
Stable, but reacts violently with water. Moisture sensitive. May be shock sensitive. Incompatible with water, moisture, acids, strong bases, oxidizing agents, alcohols.

Click to get detail MSDS

[ Symbol ]:

GHS05

[ Signal Word ]:
Danger

[ Hazard Statements ]:
H314

[ Supplemental HS ]:
Reacts violently with water.

[ Precautionary Statements ]:
P280-P305 + P351 + P338-P310

[ Personal Protective Equipment ]:
Faceshields;full-face respirator (US);Gloves;Goggles;multi-purpose combination respirator cartridge (US);type ABEK (EN14387) respirator filter

[ Hazard Codes ]:
C

[ Risk Phrases ]:
14-34

[ Safety Phrases ]:
S26-S36/37/39-S45

[ RIDADR ]:
UN 2987 8/PG 2

[ WGK Germany ]:
3

[ Packaging Group ]:
II

[ Hazard Class ]:
8

Click to get detail synthetic route

Determination of porphyrin carbon isotopic composition using gas chromatography-isotope ratio monitoring mass spectrometry.

J. Chromatogr. A. 903(1) , 183-191, (2000)

Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that ...

Chemical vapor deposition of silicon films using hexachlorodisilane Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.

MRS Proceedings 77 , 709, (1986)

Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films. Taylor, R. C., & Scott, B. A.

J. Electrochem. Soc. 136(8) , 2382-2386, (1989)

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