Bias stress effect in "air-gap" organic field-effect transistors.

Y Chen, V Podzorov

Index: Adv. Mater. 24(20) , 2679-84, (2012)

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Abstract

The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of "air-gap" OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.