Occupational medicine (Philadelphia, Pa.) 1986-01-01

Gallium arsenide.

R J Harrison

Index: Occup. Med. 1(1) , 49-58, (1986)

Full Text: HTML

Abstract

The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.


Related Compounds

Related Articles:

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

2012-08-13

[Opt. Express 20(17) , 19279-88, (2012)]

Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.

2012-01-01

[PLoS ONE 7(11) , e50681, (2012)]

Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells.

2013-01-16

[J. Phys. Condens. Matter 25(2) , 025801, (2013)]

Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.

2012-10-23

[ACS Nano 6(10) , 9320-5, (2012)]

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.

2012-10-10

[J. Phys. Condens. Matter 24(40) , 405801, (2012)]

More Articles...