Journal of the American Chemical Society 2003-11-12

High electron mobility in ladder polymer field-effect transistors.

Amit Babel, Samson A Jenekhe

文献索引：J. Am. Chem. Soc. 125 , 13656, (2003)

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摘要

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.