Journal of Nanoscience and Nanotechnology 2001-03-01

Layer-by-layer growth of CdSe-based nanocrystal light-emitting diodes.

J Lee, M Mathai, F Jain, F Papadimitrakopoulos

文献索引：J. Nanosci. Nanotechnol. 1(1) , 59-64, (2001)

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摘要

The partial exchange of surface-passivating trioctylphosphine oxide (TOPO) on CdSe and ZnS-clad CdSe (CdSe/ZnS) nanocrystals with primary amines was utilized to grow ultra-thin films of these nanocrystals under nonaqueous conditions. This growth was achieved using 1,12-diaminododecane in a layer-by-layer assembly format, where one of the amino groups binds with the nanocrystal surface and the other regenerates the interface for further binding of nanocrystals. The nature of the growth is dependent on the relative surface affinity between the TOPO and the primary amine toward the zinc or cadmium sites on the nanocrystals. Using this technique, high-quality luminescent films of these nanocrystals can be built with well-defined thicknesses. Electroluminescent devices have been fabricated using this methodology.