Journal of Nanoscience and Nanotechnology 2012-06-01

Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.

Yiming Li, Hui-Wen Cheng, Chi-Hong Hwang

文献索引：J. Nanosci. Nanotechnol. 12(6) , 4485-8, (2012)

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摘要

The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.