Advanced Materials (FRG) 2013-03-13

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature.

Pichaya Pattanasattayavong, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C O'Regan, Aram Amassian, Thomas D Anthopoulos

文献索引：Adv. Mater. 25(10) , 1504-9, (2013)

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摘要

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.