Preparation and characterization of π-stacking quinodimethane oligothiophenes. Predicting semiconductor behavior and bandwidths from crystal structures and …

…, H Higuchi, DA da Silva Filho, VG Young…

文献索引：Janzen, Daron E.; Burand, Michael W.; Ewbank, Paul C.; Pappenfus, Ted M.; Higuchi, Hiroyuki; Da Silva Filho, Demetrio A.; Young, Victor G.; Bredas, Jean-Luc; Mann, Kent R. Journal of the American Chemical Society, 2004 , vol. 126, # 46 p. 15295 - 15308

全文：HTML全文

被引用次数: 89

摘要

A series of new quinodimethane-substituted terthiophene and quaterthiophene oligomers has been investigated for comparison with a previously studied quinoid oligothiophene that has demonstrated high mobilities and ambipolar transport behavior in thin-film transistor devices. Each new quinoidal thiophene derivative shows a reversible one-electron oxidation between 0.85 and 1.32 V, a quasi-reversible one-electron second oxidation between 1.37 ...