Abstract A general methodology for the preparation of sterically hindered hydroxyaryl derivatives of both phosphorus and silicon is described. The reaction of 3, 5-di-t-butyl-4- trimethylsilyloxyphenyllithium (4), which was prepared by the metalation of 1-bromo-3, 5-di-t- butyl-4-trimethylsilyloxybenzene with n-butyllithium at− 78 C, with chlorodiphenylphosphine gave the protected phenolic derivative 3, 5-di-t-butyl-4-trimethylsilyloxyphenyl (diphenyl) ...