We have recently used tetrasilylmethane,(H3Si) 4C,'in the presence of S ib and G eb to grow heteroepitaxial, diamondstructured Sil-,-, Ge, C, alloys on (1OO) Si containing 4-6 at.% C. 2 Encapsulating the C in a diamond-like, tetrahedral environment of Si eliminates strong CH bonds in the precursor. This novel approach allows the use of low temperature (470" C) growth conditions in the ultrahigh vacuum chemical vapor deposition (UHV-CVD) reactor ...
[Kouvetakis; Haaland, Arne; Shorokhov, Dmitry J.; Volden, Hans Vidar; Girichev, Georgii V.; Sokolov, Vasili I.; Matsunaga, Phillip Journal of the American Chemical Society, 1998 , vol. 120, # 27 p. 6738 - 6744]
[Kouvetakis; Haaland, Arne; Shorokhov, Dmitry J.; Volden, Hans Vidar; Girichev, Georgii V.; Sokolov, Vasili I.; Matsunaga, Phillip Journal of the American Chemical Society, 1998 , vol. 120, # 27 p. 6738 - 6744]