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The mechanism of formation and infrared-induced decomposition of HXeI in solid Xe

M Pettersson, J Nieminen, L Khriachtchev…

文献索引:Pettersson, Mika; Nieminen, Janne; Khriachtchev, Leonid; Raesaenen, Markku Journal of Chemical Physics, 1997 , vol. 107, # 20 p. 8423 - 8431

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被引用次数: 115

摘要

Ultraviolet (UV) irradiation of HI-doped xenon matrix dissociates the precursor and leads to the formation and trapping of neutral atoms. After UVphotolysis, annealing of the matrix mobilizes the hydrogen atoms at about 38 K. The mobilized hydrogen atoms react with I/Xe centers forming HXeI molecules in a diffusion controlled reaction. The formed molecules can be photolyzed with infrared (IR) irradiation at 2950–3800 cm− 1 and quantitatively ...