p-CuO Nanowire/n-ZnO Nanosheet Heterojunction-based Near-UV Sensor Fabricated by Electroplating and Thermal Oxidation Process
Xiaochen Wang, Hyoung J. Cho
文献索引：10.1016/j.matlet.2018.04.042
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摘要
Nanostructured metal oxide semiconductors (MOSs) are widely used in the field of sensors. Different from the traditional single MOS based sensors, heterojunction-based sensors using two different MOS materials can take advantage of the charge separation effect at the heterojunction interface for an enhanced sensing mechanism. In this work, an in-situ synthesis method of p-CuO nanowire/n-ZnO nanosheet heterojunctions and its application for near-ultraviolet light detection was demonstrated. A rectifying behavior arising from the heterojunctions was observed in the I-V characterization. Under different illumination conditions, the photocurrent obeys a power law with a detection limit around 16.8 mW/mm2, validating the potential for near-UV sensing applications.