Triethylgallium

[ Density]:
1.058 g/cm3

[ Boiling Point ]:
143ºC

[ Melting Point ]:
-82.3ºC

[ Molecular Formula ]:
C₆H₁₅Ga

[ Molecular Weight ]:
156.906

[ Flash Point ]:
-18ºC

[ Exact Mass ]:
156.042953

[ LogP ]:
2.54090

Click to get detail MSDS

[ Symbol ]:

GHS02, GHS05

[ Signal Word ]:
Danger

[ Hazard Statements ]:
H225-H250-H261-H314

[ Supplemental HS ]:
Reacts violently with water.

[ Precautionary Statements ]:
P210-P222-P231 + P232-P280-P305 + P351 + P338-P422

[ Risk Phrases ]:
R14/15

[ Safety Phrases ]:
16-36/37/39-43

[ RIDADR ]:
UN 3203

[ Hazard Class ]:
4.2

[ HS Code ]:
2931900090

Click to get detail synthetic route

Precursor

DownStream

[ HS Code ]: 2931900090

[ Summary ]:
2931900090. other organo-inorganic compounds. VAT:17.0%. Tax rebate rate:13.0%. Supervision conditions:AB(certificate of inspection for goods inward,certificate of inspection for goods outward). MFN tariff:6.5%. General tariff:30.0%

Solution phase synthesis of indium gallium phosphide alloy nanowires.

ACS Nano 9 , 3951-60, (2015)

The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conv...

M. Yamaguchi

Sci. Synth. 7 , 387, (2004)

Vossen, J. L.; Kern, W.

Thin Film Processes II 1991 , 866

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