Etching Silicon with HF–HNO3–H2SO4/H2O Mixtures–Unprecedented Formation of Trifluorosilane, Hexafluorodisiloxane, and Si–F Surface Groups
…, C Gondek, M Kronstein, S Patzig??Klein…
Index: Lippold, Marcus; Boehme, Uwe; Gondek, Christoph; Kronstein, Martin; Patzig-Klein, Sebastian; Weser, Martin; Kroke, Edwin European Journal of Inorganic Chemistry, 2012 , # 34 p. 5714 - 5721
Full Text: HTML
Citation Number: 8
Abstract
Abstract The etching behaviour of sulfuric-acid-containing HF–HNO 3 solutions towards crystalline silicon surfaces has been studied over a wide range of H 2 SO 4 concentrations. For mixtures with low sulfuric acid concentration, NO 2/N 2 O 4, N 2 O 3, NO and N 2 O have been detected by means of FTIR spectroscopy. Increasing concentrations of nitric acid lead to high etching rates and to an enhanced formation of NO 2/N 2 O 4. Different products ...
Related Articles:
Nanosecond microwave discharge as an ozone source in the upper atmosphere
[Akhmedzhanov, R. A.; Vikharev, A. L.; Gorbachev, A. M.; Ivanov, O. A.; Kolganov, N. G.; et al. Physics Letters A, 1995 , vol. 207, p. 209 - 213]
Manganese porphyrins as redox-coupled peroxynitrite reductases
[Lee, Jinbo; Hunt, Julianne A.; Groves, John T. Journal of the American Chemical Society, 1998 , vol. 120, # 24 p. 6053 - 6061]
Temperature and pressure dependence of the rate constant for the HO2+ NO reaction
[Seeley, John V.; Meads, Roger F.; Elrod, Matthew J.; Molina, Mario J. Journal of Physical Chemistry, 1996 , vol. 100, # 10 p. 4026 - 4031]
[Kleffmann, Joerg; Benter, Thorsten; Wiesen, Peter Journal of Physical Chemistry A, 2004 , vol. 108, # 27 p. 5793 - 5799]
[Iwamoto, Masakazu; Yahiro, Hidenori; Mine, Yoshihiro; Kagawa, Shuichi Chemistry Letters, 1989 , p. 213 - 216]