Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics
…, MG Kim, VP Dravid, A Facchetti, TJ Marks
Index: Kim, Choongik; Wang, Zhiming; Choi, Hyuk-Jin; Ha, Young-Geun; Facchetti, Antonio; Marks, Tobin J. Journal of the American Chemical Society, 2008 , vol. 130, # 21 p. 6867 - 6878
Full Text: HTML
Citation Number: 70
Abstract
We report here on the design, synthesis, processing, and dielectric properties of novel cross- linked inorganic/organic hybrid blend (CHB) dielectric films which enable low-voltage organic thin-film transistor (OTFT) operation. CHB thin films (20− 43 nm thick) are readily fabricated by spin-coating a zirconium chloride precursor plus an α, ω-disilylalkane cross- linker solution in ambient conditions, followed by curing at low temperatures (∼ 150° C). ...
Related Articles:
gem-Difluorocyclopropanes: an improved method for their preparation
[Bessard, Yves; Mueller, Ulrich; Schlosser, Manfred Tetrahedron, 1990 , vol. 46, # 15 p. 5213 - 5221]