Room-temperature ductile inorganic semiconductor

Xun Shi, Hongyi Chen, Feng Hao, Ruiheng Liu, Tuo Wang, Pengfei Qiu, Ulrich Burkhardt, Yuri Grin, Lidong Chen

Index: 10.1038/s41563-018-0047-z

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Abstract

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver–silver and sulfur–silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.