Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications
Chao Xie, Yi Wang, Zhi-Xiang Zhang, Di Wang, Lin-Bao Luo
Index: 10.1016/j.nantod.2018.02.009
Full Text: HTML
Abstract
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance optoelectronic devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various optoelectronic devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the device design, device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.
Latest Articles:
Recent advances in functional nanomaterials for light–triggered cancer therapy
2018-03-13
[10.1016/j.nantod.2018.02.010]
Recent progress on the photocatalysis of carbon dots: Classification, mechanism and applications
2018-03-12
[10.1016/j.nantod.2018.02.008]
Colloidal aggregation: From screening nuisance to formulation nuance
2018-03-10
[10.1016/j.nantod.2018.02.011]
Two-dimensional transition metal dichalcogenide hybrid materials for energy applications
2018-03-07
[10.1016/j.nantod.2018.02.007]
Guiding Rules for Selecting a Nanothermometer
2018-03-07
[10.1016/j.nantod.2018.02.012]