Aluminum-doped Zn1 − xMgxO as transparent conductive oxide of Cu(In,Ga)(S,Se)2-based solar cell for minimizing surface carrier recombination

Jakapan Chantana, Takuya Kato, Hiroki Sugimoto, Takashi Minemoto

Index: 10.1002/pip.2911

Full Text: HTML

Abstract

Difference of conduction band minimum (EC) between Zn1 − xMgxO:Al (transparent conductive oxide; TCO) layer and Cu(In,Ga)(S,Se)2 (CIGSSe) absorber is optimized by varying [Mg]/([Mg] + [Zn]), x. Addition of 12% Mg into ZnO:Al to form Zn0.88Mg0.12O:Al as TCO layer effectively decreases surface carrier recombination and improves photovoltaic parameters. Ultimately, conversion efficiency of CIGSSe solar cell with Cd0.75Zn0.25S/Zn0.79Mg0.21O/Zn0.88Mg0.12O:Al (TCO) layers is enhanced to 20.6% owing to control of total EC alignment in the device.