Recent patents on nanotechnology 2010-01-01

Current development and patents on high-brightness white LED for illumination.

Wen-Yuan Pang, Ikai Lo, Chia-Ho Hsieh, Yu-Chi Hsu, Ming-Chi Chou, Cheng-Hung Shih

Index: Recent Pat. Nanotechnol. 4(1) , 32-40, (2010)

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Abstract

In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.

Related Compounds

Structure Name/CAS No. Articles
lithium aluminate Structure lithium aluminate
CAS:12003-67-7