a??Si: H films were prepared by rf glow discharge in SiH4??D2 or SiD4??H2 mixtures and analyzed for H and D by Rutherford forward recoil measurement in order to study its growth mechanism. In a low power rf discharge, more H atoms than D atoms were incorporated in the a??Si: H film even in the SiH4 (1 vol)??D2 (4 vol) mixture. With increase in the rf power, the H to D ratio in the film approaches the ratio in the gas for rf power ranges relatively high in ...
