Oxidation of methylsilenes with molecular oxygen. A matrix isolation study

M Trommer, W Sander, A Patyk

Index: Trommer, Martin; Sander, Wolfram; Patyk, Andreas Journal of the American Chemical Society, 1993 , vol. 115, # 25 p. 11775 - 11783

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Citation Number: 30

Abstract

Abstract: The photochemical and thermal oxidation of 1-methylsilene (24lapropene)(la), 1, l- dimethylsilene (lb), and 1, 1, 2&methylsilene (IC) has been investigated in 02-doped argon matrices. All silenes 1 are easily photooxidized in matrices containing more than 1% 02, but trimethylsilene (IC) is the only silene that exhibits thermal reactivity toward oxygen at temperatures as low as 20-40 K. The photochemical reactivity increases from la to IC with ...